Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

Structure and mechanical properties of titanium nitride thin films grown by reac - tive pulsed laser deposition

Microstructure and magnetic properties of oxidized titanium nitride thin films in situ grown by pulsed laser deposition

Different oxidation states of titanium nitride thin films, including pure TiN(h 0 0), TiN1−xOx(h 0 0), Ti2O3(0 0 l) and pure anatase TiO2(0 0 l), were prepared by pulsed laser deposition with various oxygen pressures (PO2) using a TiN target. Elaborative evolutions of the crystal and electronic structures of the obtained films were examined systematically by x-ray diffraction and x-ray absorpti...

Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique

Gallium nitride ~GaN! thin films with a wurtzite structure were grown on fused silica ~FS! substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X-ray diffraction measurement shows a single c-axis orientation for the GaN film grown with a thin ~,1000 Å! zinc oxide ~ZnO! film as an alignment layer. There is a great improvement in the surface morphology as...